Single-phase growth studies on GaP on Si by solid-source molecular beam epitaxy

GaP/Si heterostructures were grown under different growth conditions by molecular beam epitaxy in order to obtain single-phase GaP on Si. The growth results were examined by reflective high-energy electron diffraction, anisotropic etching, atomic force microscopy, and x-ray diffraction. The results showed that high quality, single-phase GaP was grown on Si at a high growth temperature, about 500 ^0C, with a low P/Ga flux ratio of 2.5, while at a lower temperature, a second phase with a 90^0 in-plane rotation was grown