Low-power all-optical gate based on sum frequency mixing in APE waveguides in PPLN

Authors

K. R. Parameswaran, M. Fujimura, M. H. Chou, M. M. Fejer

Abstract

We present an all-optical gate implemented in periodically poled lithium niobate (PPLN) (LiNbO/sub 3/). Efficient mixing is achieved by using a phase-matched guided-wave interaction. A control wave at 1.537 /spl mu/m is used to gate a signal at 1.552 /spl mu/m, where a control power of 185 mW is sufficient to achieve 96% depletion of a low-power signal. A simple switch configuration is described whereby high-contrast low-power all-optical switching can be performed.

Journal

Photon. Technol. Lett.

Volume

12

Number

6

Date

06/2000
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